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Hydrogen-adsorption induced atomic rearrangement of a Pb monolayer on Si(111)
Journal article   Peer reviewed

Hydrogen-adsorption induced atomic rearrangement of a Pb monolayer on Si(111)

Ing-Shouh Hwang, Shih-Hsin Chang, Chung-Kai Fang, Lih-Juann Chen and Tien T. Tsong
Physical Review Letters, Vol.94(4), 045505
04/02/2005

Abstract

We have observed interesting H-atom adsorption induced atomic rearrangements of a Pb monolayer on the Si(111) with a scanning tunneling microscope. A hexagonal ringlike pattern is formed around the point defect. The interactions among nearby H-adsorbed defects can even produce interferencelike super-structures. Phase boundaries are found to either enhance or suppress the formation of the interference pattern. These phenomena are produced by an intricate interplay between electronic and atomic interactions as perturbed by the adsorbed hydrogen atoms. c 2005 The American Physical Society.

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