Abstract
Local structures around Mn in In 1-x Mn x As films grown by molecular-beam epitaxy have been studied by using Mn K-edge extended x-ray-absorption fine-structure (EXAFS) technique. Substitution of Mn atoms for the In sites is found in samples either grown at low substrate temperatures (near 200°C) or with a low Mn concentration (about 1 at. %). This result represents a significant extension of an earlier EXAFS study and serves as direct experimental evidence for III-V diluted magnetic semiconductors obtained by substitutional doping of Mn impurities in InAs.