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Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
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Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

S.-K. Lin, C.-H. Wu, M.-C. Chen, T.-C. Chang, C.-H. Lien, Y.-L. Xu, Y.-T. Tseng, P.-Y. Wu, Y.-F. Tan, L.-C. Sun, …
Journal of Physics D: Applied Physics, 卷.53(39)
2020
Web of Science ID: WOS:000551657000001

摘要

Electrodes Hafnium oxides Ionization of gases Oxygen RRAM Active oxygen Current conduction mechanisms Electrical analysis Electrode thermal conductivity High-resistance state Input power Switching behaviors Thermal conductivity
This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (dsw) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods. © 2020 IOP Publishing Ltd.

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url
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088011667&doi=10.1088%2f1361-6463%2fab92c5&partnerID=40&md5=4e24149c22238fa76fe290ad4fe577d0檢視
url
https://doi.org/10.1088/1361-6463/ab92c5檢視
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合作類型
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引用書目主題
5 Physics
5.310 Resistive Switching
5.310.1164 Resistive Switching
Web Of Science研究領域
Physics, Applied
ESI研究領域
Physics

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