Abstract
CF 4 plasma treatment on germanium (Ge) surface is proposed in this work to alleviate the strong Fermi level pinning between metal/Ge, and its effectiveness is also explored for n- and p-type Ge wafers. It is found that samples with CF 4 plasma treatment reveal conduction behavior transition between Schottky and ohmic characteristics, a metal-work-function- dependent Schottky barrier height as well as modulated contact resistance, and these results confirm the depinning of Fermi level. This depinning can be explained by the effective capability in passivating dangling bonds at Ge surface through fluorine atoms and the formation of Ge-F binding with partial ionic property, both of which are helpful in decreasing the number of surface states and consequently release the pinning effect. © 2011 American Institute of Physics.