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Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO4 film
Journal article   Peer reviewed

Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO4 film

Yung-Hsien Wu, Chia-Chun Lin, Lun-Lun Chen, Bo-Yu Chen, Min-Lin Wu and Jia-Rong Wu
Applied Physics Letters, Vol.96(13), 133501
2010

Abstract

For metal-insulator-metal (MIM) capacitors with an amorphous ZrTiO 4 film as the dielectric, the impact of top electrode including Ni and Al on electrical stress reliability was studied and the mechanisms to explain the electrode-dependent reliability were also proposed in this work. It has been found that the Ni-electrode MIM capacitors reveal good reliability in terms of 0.91% capacitance change after ten-year operation under -2 V constant voltage stress while that for those with Al electrode degrades to 1.92%. This undesirable higher capacitance change can be mainly ascribed to a larger permittivity modulation in the dielectric that is due to higher leakage current and consequently more trapped charges and dipoles caused by a lower electrode work function. In addition, a parasitic Al 2 O 3 film in the Al-electrode MIM capacitors also worsens the integrity of the dielectric because of the existence of additional traps. © 2010 American Institute of Physics.

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