摘要
Ultraviolet laser thermal annealing (LTA) is proposed to form contact TiSix for sub-10 nm FinFETs. Compared to conventional rapid thermal annealing (RTA), LTA process leads to reduced total series resistance (RTotal) by 10.1&null % and 13.0&null % which corresponds to enhanced transconductance (gm) by 7.7&null % and 5.9&null % for N-/P-FinFETs respectively due to improved contact resistivity (pc) by 69 % arising from more orderly local Ti-Si bonds and smoother TiSix/Si interface. There is also no concern of LTA process in terms of comparable off-state/junction leakage and reliability by hot carrier stress. In addition, LTA is VLSI-compatible without adding any process complexity. These promising properties enable LTA to further unleash the performance of FinFETs.