摘要
A hole mobility of &null cm2/V-s at Ninv&null &null cm-2, a gate leakage current density of &null A/cm2 at VG&null VFB&null 1 V, and an equivalent oxide thickness of &null nm in Ge pMOSFETs are simultaneously achieved by using GeON interfacial layer (IL) formed with NH3 plasma and microwave annealing (MWA) treatments. The high performance can be attributed to the O-N polar covalent bonds in GeON, which is efficiently annealed by MWA to increase Ge oxidation sate in the IL. Ge out-diffusion or GeO desorption can be suppressed by a MWA thanks to less thermal budget.