摘要
Split-up effect caused by sub-cycling would change the coercive voltage (VC) of a ferroelectric HfZrOx (HZO) film by the induced local internal field due to oxygen vacancy (Vo) related behaviors and is detrimental to MLC operation. By depositing the HZO on NH3 plasma-treated Si, due to the high-quality SiNx interfacial layer that reduces the amount of Vo in the HZO, the ferroelectric FET (FeFET) memory reveals a large memory window of 3.2 V by +6/-5 V with 5μs pulse width and much improved reliability against sub-cycling for multi-level cell (MLC, 2 bits/cell) operation than those without plasma treatment. The FeFET memory also for the first time displays the stable (threshold voltage)VTH for each state for triple-level cell (TLC, 3 bits/cell) operation up to 3 × 103 cycles that meets the industry requirement under strict sub-cycling and exhibiting quadruple-level cell (QLC, 4 bits/cell) operation with desirable retention, ushering in new paradigms for advanced high-density memory applications.