摘要
AlON/HfZrO<sub>x</sub> (HZO)/HfO<sub>2</sub> stack with post-deposition annealing (PDA) process at 400 &null is proposed to implement BEOL compatible ferroelectric (FE) capacitors. While interface engineering by AlON and HfO<sub>2</sub> enhances P<sub>r</sub> to enable more bits storage, PDA reduces oxygen vacancies in the HZO by eliminating the reaction between HZO and top electrode. The FE capacitors display wake-up free behavior and the first reported 3 bits/cell operation with 8 stable states up to 10 <sup>8</sup> cycles (&null V/1 &null), non-overlapped cycle-to-cycle and device-to-device variation (&null &null 0.4 &null <sup>2</sup> ), outperforming other FE capacitors and demonstrating high potential for high-density embedded ferroelectric random-access memory (FeRAM).