摘要
The effectiveness of tantalum nitride with N 2 or O 2 plasma treatment as a diffusion barrier between copper and silicon were investigated. As such, an amorphous layer was found to form on the surface of the TaN film after the plasma treatment. The oxygen and nitrogen bonding states were observed for O 2 and N 2 plasma-treated TaN films. Thus, thermal stabilities of plasma-treated barriers TaN(N)/TaN and TaN(O)/TaN were said to be better than those of untreated barriers TaN(10 nm) and TaN(50 nm).