Abstract
Ge MOS devices with about 95% Ge 4+ in HfGeOx interfacial layer are obtained by H 2 O plasma process together with in situ desorption before atomic layer deposition (ALD). The equivalent oxide thickness is scaled down to 0.39 nm; the leakage current is decreased as well. The improvement can be attributed to the in situ Ge suboxide desorption process in an ALD chamber at 370 °C. The interface trap density and frequency dispersion need further process development to be reduced. © 1980-2012 IEEE.