Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization

Chun-Hao Tu; Ting-Chang Chang; Po-Tsun Liu; Che-Yu Yang; Li-Wei Feng; Chia-Chou Tsai; Li-Ting Chang; Yung-Chun Wu; Simon M. Sze; Chun-Yen Chang

doi:10.1109/JDT.2006.890707

Journal article

Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization

Chun-Hao Tu, Ting-Chang Chang, Po-Tsun Liu, Che-Yu Yang, Li-Wei Feng, Chia-Chou Tsai, Li-Ting Chang, Yung-Chun Wu, Simon M. Sze and Chun-Yen Chang

IEEE/OSA Journal of Display Technology, Vol.3(1), pp.45-49

03/2007

DOI: https://doi.org/10.1109/JDT.2006.890707

Abstract

Excimer laser crystallization (ELC)

F-ions implant

Polycrystalline silicon thin-film transistors (poly-Si TFTs)

SPC

Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones. © 2007 IEEE.

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Title: Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization
Creators - without role: Chun-Hao Tu - Institute of Electronics , National Chiao Tung University
Ting-Chang Chang - National Sun Yat-sen University
Po-Tsun Liu - Institute of Electronics , National Chiao Tung University
Che-Yu Yang - National Yang Ming Chiao Tung University
Li-Wei Feng - Institute of Electronics
Chia-Chou Tsai - National Yang Ming Chiao Tung University
Li-Ting Chang - National Yang Ming Chiao Tung University
Yung-Chun Wu - Department of Engineering and System Science , National Tsing-Hua University
Simon M. Sze - National Yang Ming Chiao Tung University
Chun-Yen Chang - IEEE
Publication Details: IEEE/OSA Journal of Display Technology, Vol.3(1), pp.45-49
Identifiers: 9957776565306774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: English
Resource Type: Journal article

Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization

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