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Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide-Nitride-Oxide Semiconductor Devices by Irradiation-Then-Anneal Treatments
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Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide-Nitride-Oxide Semiconductor Devices by Irradiation-Then-Anneal Treatments

Kuei-Shu Chang-Liao 和 Jenn-Gwo Hwu
IEEE Transactions on Electron Devices, 卷.41(4), 頁碼.612-614
1994
DOI: https://doi.org/10.1109/16.278518

摘要

Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
The hardnesses of hot-carrier and radiation of metal-oxide nitride-oxide semiconductor (MONOS) devices can be improved by the irradiation-then-anneal (ITA) treatments. Each treatment includes an irradiation of Co-60 with a total dose of 1M rads(SiO2) and an anneal in N2 at 400° C for 10 min successively. This improvement can be explained by the release of SiO2/Si interfacial strain. © 1994 IEEE

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