摘要
The morphological stability of ultrahigh vacuum deposited Ag film on (001)Si has been drastically improved by the deposition of 1 to 5 nm thick interposing Au layers. In Agy(001)Si samples, Ag islands were found to form after annealing at 200 ±C for 1 h. In contrast, continuous and uniform metal layer persisted after annealing at 500 ±C for 1 h in samples with a thin intermediate Au layer. The significantly improved morphological stability is attributed to the strong intermixing between Au and Ag atoms at the metalySi interface. The intermixing lowers the interface energy between metal layer and (001)Si.