Abstract
(Pb 1-x La x )(Zr y Ti 1-y ) 1-x/4 O 3 , PLZT, thin films, possessing pure perovskite phase and good ferroelectric properties (P r = 21-25 μC/cm 2 ) were successfully deposited on Pt-coated Si substrates, using SrRuO 3 perovskite as buffer layer. Precoating a metallic Ru-layer on Pt(Si) substrates prior to the deposition of SrRuO 3 buffer layer further improved thin films' electrical properties. The optimum ferroelectric properties achieved are P r = 25.6 μC/cm 2 , Ec = 47.1 kV/cm and ε r = 1,204. Analyses of elemental depth profiles using secondary ions mass spectroscopy (SIMS) indicate that the significant outward diffusion of Ti- and Si- species has been markedly suppressed at the presence of metallic Ru-layer. The effective suppression on the interdiffusion between the SrRuO 3 buffer layer and the subsequently deposited PLZT is presumed to be the main factor resulting in better ferroelectric properties for PLZT thin films.