Logo image
返回
Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO-Based Resistive Random Access Memory
期刊文章

Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO-Based Resistive Random Access Memory

S.-K. Lin, C.-H. Wu, T.-C. Chang, C.-H. Lien, C.-C. Yang, W.-C. Chen, C.-C. Lin, W.-C. Huang, Y.-F. Tan, P.-Y. Wu, …
IEEE Transactions on Electron Devices, 卷.68(3), 頁碼.1037-1040
2021
DOI: https://doi.org/10.1109/TED.2021.3053502
Web of Science ID: WOS:000622100700015

摘要

Indium oxide oxygen ion reservoir resistive random access memory (RRAM) Curve fitting Deposition Indium compounds Oxygen Conduction Mechanism Forming voltages High-resistance state Improving performance Indium oxide layer Low-resistance state Resistive random access memory Resistive random access memory (rram) Random access storage
This study investigates an improvement in memory characteristics through depositing an In2O3 layer as an oxygen ion reservoir in the switching layer (SL) of resistive random access memory (RRAM). The deposition of In2O3, denoted as Pt/HfO2/In2O3/TiN device, provides better memory characteristics including lower forming voltage (VF), set/reset voltage (VSET/VRESET), larger memory window, and higher resistances with higher uniformity at low resistance state (LRS) and high resistance state (HRS), compared to the devices without the In2O3 deposition, denoted as Pt/HfO2/TiN device. The conduction mechanisms, verified through fitting current-voltage (I-V) curves, are consistent with the results of a varied temperature I-V experiment. Finally, a physical model is proposed to explain our observations. © 1963-2012 IEEE.

檔案與連結 (1)

url
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100727907&doi=10.1109%2fTED.2021.3053502&partnerID=40&md5=8ffd3efffbf1b460d0aeeabecc04c3c5檢視

相關連結

指標

1 檢視次數

詳細資料

Logo image