(In, Mn)As nanowires with ultrahigh Mn concentration: Growth, morphology and magnetic anisotropy

F. Xu; P.W. Huang; J.H. Huang; R.T. Huang; W.N. Lee; T.S. Chin; Y.W. Du

doi:10.1016/j.ssc.2010.10.038

(In, Mn)As nanowires with ultrahigh Mn concentration: Growth, morphology and magnetic anisotropy

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(In, Mn)As nanowires with ultrahigh Mn concentration: Growth, morphology and magnetic anisotropy

F. Xu, P.W. Huang, J.H. Huang, R.T. Huang, W.N. Lee, T.S. Chin 和 Y.W. Du

Solid State Communications, 卷.151(2), 頁碼.169-172

01/2011

DOI: https://doi.org/10.1016/j.ssc.2010.10.038

摘要

A. Magnetic semiconductor nanowire

B. Molecular-beam epitaxy

C. (In, Mn)As

D. Self-alignment

Chemistry (all)

Condensed Matter Physics

Materials Chemistry

(In,Mn)As nanowires with ultrahigh Mn concentration have been successfully grown on GaAs(001) substrates by molecular beam epitaxy. The morphology dependences on Mn concentration and growth temperature are investigated. High Mn concentration and high growth temperature are both necessary for the growth of nanowires. All the (In,Mn)As nanowires are self-aligned along [-110]GaAs, and therefore have the shape magnetic anisotropy with the easy axis along the alignment orientation of the nanowires. © 2010 Elsevier Ltd. All rights reserved.

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題名: (In, Mn)As nanowires with ultrahigh Mn concentration: Growth, morphology and magnetic anisotropy
創作者：: F. Xu (作者) - National Tsing Hua University
P.W. Huang (作者) - Department of Materials Science and Engineering , National Tsing Hua University
J.H. Huang (作者) - National Tsing Hua University
R.T. Huang (作者) - National Taiwan Ocean University
W.N. Lee (作者) - National Tsing Hua University
T.S. Chin (作者) - National Tsing Hua University
Y.W. Du (作者) - Nanjing University
學術資源類型: 期刊文章
出版日期: 01/2011
出版資訊: Solid State Communications, 卷.151(2), 頁碼.169-172
語言: 英語

(In, Mn)As nanowires with ultrahigh Mn concentration: Growth, morphology and magnetic anisotropy

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