Logo image
返回
In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device
期刊文章   開放取用(OA)   同儕審查

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

He Tian, Haiming Zhao, Xue-Feng Wang, Qian-Yi Xie, Hong-Yu Chen, Mohammad Ali Mohammad, Cheng Li, Wen-Tian Mi, Zhi Bie, Chao-Hui Yeh, …
Advanced Materials, 卷.27(47), 頁碼.7767-7774
12/2015
DOI: https://doi.org/10.1002/adma.201503125

摘要

bilayer graphene gate controlled in situ resistive memory switching windows Materials Science (all) Mechanics of Materials Mechanical Engineering
A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.

檔案與連結 (1)

url
https://doi.org/10.1002/adma.201503125檢視
已出版(紀錄版本) 開放

相關連結

指標

1 檢視次數

詳細資料

Logo image