In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

Journal article

Open access

Peer reviewed

He Tian, Haiming Zhao, Xue-Feng Wang, Qian-Yi Xie, Hong-Yu Chen, Mohammad Ali Mohammad, Cheng Li, Wen-Tian Mi, Zhi Bie, Chao-Hui Yeh, …

Advanced Materials, Vol.27(47), pp.7767-7774

16/12/2015

Abstract

bilayer graphene

gate controlled

in situ

resistive memory

switching windows

[無可用摘要]

url

https://doi.org/10.1002/adma.201503125View

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Title: In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device
Creators - without role: He Tian - Institute of Microelectronics
Haiming Zhao - Tsinghua University
Xue-Feng Wang - Tsinghua University
Qian-Yi Xie - Tsinghua University
Hong-Yu Chen - Stanford University
Mohammad Ali Mohammad - Institute of Microelectronics
Cheng Li - Institute of Microelectronics
Wen-Tian Mi - Tsinghua University
Zhi Bie - Tsinghua University
Chao-Hui Yeh - National Tsing Hua University
Yi Yang - Tsinghua University
H.-S. Philip Wong - Stanford University
Po-Wen Chiu - Department of Electrical Engineering , National Tsing Hua University
Tian-Ling Ren - Tsinghua University
Identifiers: 9957770462306774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Journal article
Publication Details: Advanced Materials, Vol.27(47), pp.7767-7774