摘要
In this study, the effect of stacking faults (SFs) on electromigration in silver nanowires (AgNWs) in particular, with respect to their effects on necking and void growth, is investigated. The galvanic replacement reaction is used to synthesize the AgNWs in bulk at low cost. By varying the concentration of silver nitrate, AgNWs are obtained with and without SFs. In situ TEM analysis provides strong evidence that the SFs can effectively suppress the migration of surface atoms. Furthermore, an investigation of the void growth process reveals that SF facets parallel to the {111} plane contribute to the anisotropic change in morphology and slow down the rate of void growth by 135 times. Thus, planar defects can be beneficial to extending the lifetimes of devices by causing intrinsic changes to the material properties.