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In situ epitaxial growth of Y1Ba2Cu3O 7-x films by molecular beam epitaxy with an activated oxygen source
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In situ epitaxial growth of Y1Ba2Cu3O 7-x films by molecular beam epitaxy with an activated oxygen source

J. Kwo, M. Hong, D.J. Trevor, R.M. Fleming, A.E. White, R.C. Farrow, A.R. Kortan and K.T. Short
Applied Physics Letters, Vol.53(26), pp.2683-2685
1988

Abstract

Highly oriented, epitaxial Y 1 Ba 2 Cu 3 O 7-x thin films were prepared on MgO(100) by molecular beam epitaxy at a substrate temperature of 550-600°C. The in situ growth was achieved by incorporating reactive oxygen species produced by a remote microwave plasma in a flow-tube reactor. The epitaxial (001) orientation is demonstrated by x-ray diffraction and ion channeling. In situ reflection high-energy electron diffraction showed that a layer-by-layer growth has produced a well-ordered, atomically smooth surface in the as-grown tetragonal phase of an oxygen stoichiometry of 6.2-6.3. A 500°C anneal in 1 atm of O 2 converted the oxygen content to 6.7 to 6.8. Typical superconducting transport properties of an Y 1 Ba 2 Cu 3 O 7-x film 1000 Å thick are ρ(300 K)=325 μΩ cm, ρ(300 K)/ρ(100 K)=2.4, T c (onset)=92 K, and T c (R=0)=82 K. The transport J c at 75 K is 1×10 5 A/cm 2 , and increases to 1×10 6 A/cm 2 at 70 K.
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