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(In0.52Al0.48)1-xMnxAs diluted magnetic semiconductor grown on InP substrates
Journal article   Peer reviewed

(In0.52Al0.48)1-xMnxAs diluted magnetic semiconductor grown on InP substrates

W.N. Lee, Y.F. Chen, J.H. Huang, X.J. Guo, C.T. Kuo, T.S. Chin and H.C. Ku
Journal of Physics Condensed Matter, Vol.18(1)
11/01/2006

Abstract

A series of diluted magnetic semiconductors, (In <sub>0.52</sub> Al <sub>0.48</sub> ) <sub>1-x</sub> Mn <sub>x</sub> As (0< x≤0.11), was successfully grown on InP substrate by low-temperature molecular beam epitaxy. Our results indicate that (In <sub>0.52</sub> Al <sub>0.48</sub> ) <sub>1-x</sub> Mn <sub>x</sub> As exhibits interesting magnetic behaviours at 5 K: it shows paramagnetic-like behaviour when x≤0.05 and ferromagnetic behaviour when x≥0.06.

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