摘要
A new InGaAs pin photodiode employing the donor-gettering source Er into the InGaAs growth solution to obtain a low carrier concentration by liquid-phase epitaxy has been fabricated for the first time. The devices with and without antireflection coating exhibit the photoresponsivity of, respectively, 0.7 and 1.0 A/W at 1.6µm at zero bias. © 1994, IEE. All rights reserved.