Abstract
We report a 20-layer Inx Ga1-x As In0.52 Al0.24 Ga0.24 As quantum wire infrared photodetector grown on (001)-axis InP substrate by molecular beam epitaxy. High density InGaAs quantum wires were formed, utilizing the strained-induced lateral-layer ordering process by growing a strain-balanced (GaAs)1.80 (InAs)2.35 short-period superlattice. This device shows a unique polarized photoresponse which favors the normal-incident infrared radiation polarizing perpendicular to the wire orientation. The photoresponse at 6.3 μm exhibited a peak detectivity of 3.13× 109 cm Hz12 W at 10 K. © 2007 American Institute of Physics.