Abstract
We demonstrate that indium nitride (InN) can be used as ion selective electrode (ISE) for anion concentration measurements. The InN ISE reveals remarkable selectivity, response time, signal stability, and repeatability for chlorine and hydroxyl ions. The selective interaction of Lewis bases in solutions with the N -polarity InN epitaxial layer grown on silicon is confirmed by potentiometric responses. The Helmholtz potential of the InN ISE, generated at the InN/solution interface, satisfies the Nernst equation. The observation of anion attraction to the InN surface further demonstrates the existence of donor-type surface states on InN. © 2007 American Institute of Physics.