Incorporation of Ligand-Receptor Binding-Site Models and Transistor-based Sensors for Resolving Dissociation Constants and the Number of Binding Sites

期刊文章

開放取用(OA)

IET Nanobiotechnology, 卷.8(1), 頁碼.10-17

03/2014

摘要

Binding-site models;AlGaN/GaN;HEMTs

url

https://doi.org/10.1049/iet-nbt.2013.0031檢視

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題名: Incorporation of Ligand-Receptor Binding-Site Models and Transistor-based Sensors for Resolving Dissociation Constants and the Number of Binding Sites
創作者：: Yu-Lin Wang (作者)
Chih-Cheng Huang (作者)
Yen-Wen Kang (作者)
學術資源類型: 期刊文章
出版日期: 03/2014
出版資訊: IET Nanobiotechnology, 卷.8(1), 頁碼.10-17
語言: 英語