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Incorporation of carbon quantum-dot films with silicon substrates for improved photovoltaic performances
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Incorporation of carbon quantum-dot films with silicon substrates for improved photovoltaic performances

Yu-Cheng Yen, Po-Hsuan Hsiao, Shih-Hsiu ChenChia-Yun Chen
Materials letters, 卷.364, 頁.136359
01/06/2024
Web of Science ID: WOS:001222303000001

摘要

Heterojunction Quantum dots Silicon Solar energy materials Surfaces
•Fluorine-ion doped carbon quantum dots (FCQD) are synthesized.•Detailed characterizations of FCQD films are performed.•Coupling of FCQD/graphene/Si presents conversion efficiency of 13.6%. Employment of fluorine-ion doped carbon quantum dot (FCQD) films with silicon (Si) substrates is realized via the facile solution process that exhibits the remarkable photovoltaic characterizations. In-depth materials and cell characterizations are performed, and the improvement of charge separation at FCQD/Si interfaces compared with undoped CQD/Si cases are experimentally elucidated, showing the conversion efficiency of 13.6 %, approximately 2 times higher than undoped CQD-based solar cells with conversion efficiency of 6.8%. The results are of great importance for QD-based light-harvesting and optoelectronic applications.

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