Abstract
Polycrystalline Mn-doped, Nb-doped, and pure BiFe O3 (BFO) films were fabricated via chemical solution deposition (CSD) method. Influence of Mn and Nb dopants on electric properties of BFO films were studied. The current density versus electric field (J-E) characteristics indicated that conduction mechanisms of Mn-doped, Nb-doped, and pure BFO films annealed at 500 °C were Ohmic conduction, grain boundary limited conduction, and space charge limited conduction, respectively. The effect of Mn and Nb dopants on electric properties of BFO films was interpreted by defect chemistry and chemical reaction in the CSD process. The Nb dopant is effective in improving electrical properties of CSD-derived BFO films, while Mn is harmful in this respect. © 2006 American Institute of Physics.