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Influence of Ti content on the partial oxidation of TixFeCoNi thin films in vacuum annealing
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Influence of Ti content on the partial oxidation of TixFeCoNi thin films in vacuum annealing

Ya-Chu Yang, Jien-Wei YehChun-Huei Tsau
Materials, 卷.10(10), 1141
09/2017

摘要

Oxide Sputtering Thin films Vacuum annealing Materials Science (all)
This study investigated the effects of Ti content and vacuum annealing on the microstructure evolution of Ti x FeCoNi (x = 0, 0.5, and 1) thin films and the underlying mechanisms. The as-deposited thin film transformed from an FCC (face center cubic) structure at x = 0 into an amorphous structure at x = 1, which can be explained by determining topological instability and a hard ball model. After annealing was performed at 1000 °C for 30 min, the films presented a layered structure comprising metal solid solutions and oxygen-deficient oxides, which can be major attributed to oxygen traces in the vacuum furnace. Different Ti contents provided various phase separation and layered structures. The underlying mechanism is mainly related to the competition among possible oxides in terms of free energy production at 1000 °C.

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https://doi.org/10.3390/ma10101141檢視
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