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Influence of Zr-doping on the microstructure and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 materials
Journal article   Peer reviewed

Influence of Zr-doping on the microstructure and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 materials

Wen-An Lan, Mei-Hui Liang, CHEN-TI HU, Kuo-Shung Liu and I-Nan Lin
Materials Chemistry and Physics, Vol.79(2-3), pp.266-269
10/04/2003
Appears in  keyword about Physics

Abstract

Ba(Mg,Ta)O3 Microwave dielectrics Ordering effect
The effect of Zr-species addition on the microwave dielectric properties of Ba(Mg 1/3 Ta 2/3 )O 3 , BMT materials was examined. The sintering behavior and the microwave dielectric properties of the BMT materials varies with the routes by which the Zr-species were incorporated. Two-step process leads to pronounced improvement, whereas single-step process results in markedly degradation on microwave Q-factor for the materials. SEM and X-ray diffraction analyses reveal that the main factor, resulting in deleterious effect due to addition of Zr-species via single-step process, in the induction on the formation of secondary phase, which is turn, is owing to the slow reaction kinetics of ZrO 2 and BaCO 3 for the formation of BaZrO 3 perovskite phase. © 2002 Elsevier Science B.V. All rights reserved.

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