Abstract
We investigated the influence of passivation-layer deposition on the characteristics of a-InGaZnO thin-film transistors (TFTs). The threshold voltage (V T )$ of the TFTs shifted markedly as a result of the mechanical stress induced by the passivation layers above. By adjusting the deposition parameters during the passivation process, the performance of the TFTs can be modulated. The a-InGaZnO TFTs after dual passivation exhibited good performance with a field-effect mobility of 11.35 cm 2 )V.s, a threshold voltage of 2.86 V, and an onoff ratio of 10 8 . © 2010 IEEE.