Influence of point defects on formation of fluorine bubbles and characterization of defects in BF2 + implanted silicon

C.H. Chu; J.J. Yang; L.J. Chen

doi:10.1016/0168-583X(93)95031-Y

Back

Journal article

Influence of point defects on formation of fluorine bubbles and characterization of defects in BF2 + implanted silicon

C.H. Chu, J.J. Yang and L.J. Chen

Nuclear Inst. and Methods in Physics Research, B, Vol.74(1-2), pp.138-141

02/04/1993

DOI: https://doi.org/10.1016/0168-583X(93)95031-Y

Appears in keyword about Physics

Abstract

The effects of point defect injection on the the formation of fluorine bubbles in BF ₂ ⁺ implanted silicon have been investigated by transmission electron microscopy (TEM). Excess silicon self-interstitial injection due to oxidation were found to be most effective in alleviating the formation of fluorine bubbles. Microstructural defects have been characterized by high resolution TEM. © 1993.

Metrics

1 Record Views

Details

Title: Influence of point defects on formation of fluorine bubbles and characterization of defects in BF2 + implanted silicon
Creators - without role: C.H. Chu - National Tsing Hua University
J.J. Yang - National Tsing Hua University
L.J. Chen - National Tsing Hua University
Publication Details: Nuclear Inst. and Methods in Physics Research, B, Vol.74(1-2), pp.138-141
Identifiers: 9957767150606774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Journal article

Influence of point defects on formation of fluorine bubbles and characterization of defects in BF2 + implanted silicon

Abstract

Related links

Metrics

Details

National Tsing Hua University Social media