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Influence of thin metal base thickness on the performance of CuPc vertical organic triodes
Journal article   Peer reviewed

Influence of thin metal base thickness on the performance of CuPc vertical organic triodes

Shiau-Shin Cheng, Chuan-Yi Yang, You-Che Chuang, Chun-Wei Ou, Meng-Chyi Wu, Shin-Yen Lin and Yi-Jen Chan
Applied Physics Letters, Vol.90(15), 153509
2007

Abstract

In this letter, the characteristics of vertical organic triodes fabricated by using two copper phthalocyanine (CuPc) back-to-back Schottky diodes with different metal base thicknesses are reported. The vertical organic triodes exhibit pronounced saturation regions in the output current-voltage characteristics. The common-emitter current gain reduces with increasing the Al base thickness due to the increase of recombination current at the base end resulted from the reduction of opening voids in the Al metal film. The common-emitter current gain of the device with 4.5 nm thick Al base reaches 1.9 at V CE =-6 V and J B =2.5 mA/cm 2 . © 2007 American Institute of Physics.

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