摘要
The growth of large-area MoS 2 films was achieved through atmospheric pressure chemical vapor deposition via vapor management in this study. The thickness of the MoS 2 film changed upon varying the amount of vapor deposited on the substrate. Gratifyingly, large-area monolayer MoS 2 was obtained under controlled conditions. Studies using transmission electron microscopy and second harmonic generation confirmed that the MoS 2 films were composed of grains having sizes ranging from 40 to 70 μm. Flexible MoS 2 device arrays were fabricated on a polyimide substrate; the device arrays displayed high spatial uniformity in their carrier transport properties. The contact metals affected the electrical characteristics of the MoS 2 devices under strain; the sensitivity of devices featuring Schottky contacts was higher than that of those with ohmic contacts. Importantly, the device arrays exhibit sensitive and endurance performances under strain cycles of up to 10 5 times. These results suggest a means for the feasible growth of large-area single-layer MoS 2 films, as well as the exploitation of flexible MoS 2 device arrays in strain and human motion sensor applications.