Abstract
The initial oxidation of the Si-terminated 6H-SiC(0001)3×3 reconstructed surface is studied by core level photoemission spectroscopy using synchrotron radiation. Even at low temperatures (500 °C), the direct oxidation of the 6H-SiC(0001)3×3 surface leads to SiO 2 formation with a non abrupt interface including significant amounts of intermediate (Si 3+ , Si 2+ , Si + ) and mixed (Si-O-C) oxidation products. In contrast, thermal oxidation using same conditions of a pre-deposited Si overlayer leads to C-free and abrupt SiO 2 /6H-SiC(0001) interface formation.