Field-effect transistors (FETs) with controllable field-dependent carrier transport characteristics and unique signal amplification have provided an excellent platform for developing high-performance artificial sensors and intelligent-sensing interaction technologies. As the critical component of humanoid robotics, FET-based tactile sensors with diverse working mechanisms have been studied intensively and have demonstrated remarkable potential in intelligent human-machine interactions. Given that effective carrier-modulation capabilities of FETs significantly determine critical metrics of tactile sensing systems, this review systematically explores how diverse device, material, and processing innovations create different sensing characteristics, including tactile sensitivity, stretchability, and resolution, that thus underlie diverse strategies to engineer sensing behaviors toward specific applications of FET tactile sensors. We also examine the various strategies, including material-structure co-design, stretchability engineering, and high-resolution fabrication technologies, to engineer sensing behaviors in FET tactile sensors toward specific applications spanning wearable electronic skins, tactile-perceptive neuromorphic systems, and intelligent displays. Finally, we discuss the challenges regarding signal stability under dynamic deformation, response linearity, and saturation in high-pressure regimes, and scalable high-resolution integration, and outline promising solutions through the co-optimization of intrinsically stretchable materials, innovative device architectures, and advanced multi-scale fabrication processes.
- Intelligent Tactile Perception Revolution: Innovations in Flexible FET-Based Tactile Sensors for Next-Gen Human-Machine Interfaces
- Qiyi Nie - Shanghai UniversityFei Wang - Shenyang Institute of AutomationFeng-Shou Yang - Department of Electrical Engineering & Institute of Electronic Engineering, National Tsing Hua University, Hsinchu, TaiwanHanzhi Xun - Shanghai UniversityJiachen Hou - Shanghai Institute of TechnologyQingyang Xu - Institute of Artificial Intelligence, School of Future Technology, Shanghai University, Shanghai, ChinaYing Hong - École Polytechnique Fédérale de LausanneJingyu Zhang - Shanghai UniversityXueyong Wei - Xi'an Jiaotong UniversityYen-Fu Lin - Department of Physics, National Chung Hsing University, Taichung, TaiwanLonghui Zeng - Ministry of EducationMengjiao Li - Shanghai Fudan Microelectronics (China)Biao Wang - Shanghai Institute of TechnologyPo-Wen Chiu - National Tsing Hua University, College of Semiconductor ResearchJianhua Zhang - Shanghai University
- Wiley-VCH
- 52575129 / National Natural Science Foundation of China Shanghai Collaborative Innovation Center of Intelligent Perception Chip Technology 2023YFB3208103 / National Key Research and Development (R&D) Program from Ministry of Science and Technology 24ZR1423200 / General Projects of Natural Science Foundation of Shanghai 62304130 / National Natural Science Foundation of China
- Journal article
- 01/02/2026
- Advanced Materials (Weinheim), Vol.38(10), e10646
- English