Abstract
TaSi 2 nanowires have been synthesized on Si substrate by annealing FeSi 2 thin film and NiSi 2 films at 950 °C in an ambient containing Ta vapor whose length would be grown up to 13 μm. The metallic TaSi 2 nanowires exhibit excellent electrical properties with remarkable high failure current density of 3 × 10 8 A cm - 2 . In addition, the growth mechanism is addressed in detail, The TaSi 2 nanowires are formed in three steps: segregation of Si atoms from the FeSi 2 thin film and NiSi 2 films underlayer to form Si base, growth of TaSi 2 nanodots on Si base, and elongation of TaSi 2 nanowire along the growth direction. This simple approach promises future applications in nanoelectronics and nano-optoelectronics. © 2007 Elsevier B.V. All rights reserved.