Abstract
Intercrossed ZnS nanostructures doped with Ga (ZnS: Ga nanowalls) have been synthesized in high yield from mixed powders in a vacuum furnace. ZnS: Ga nanowalls were grown vertically on the substrate with the size in the range of several micrometers and the thickness down to ∼15 nm and have very rough edges. Due to the high surface area and distinctive morphology of ZnS: Ga nanowalls, the photocatalytic activity and the photoresponse show superior properties compared to ZnS: Ga films. The increased conductivity of metal-semiconductor-metal (Ag-ZnS: Ga nanowalls-Ag) Schottky photodetectors under light illumination is attributed to the photogenerated electron-hole pairs, the desorption of oxygen molecules on the ZnS: Ga surface, and the lowering of the Schottky barrier height. The results indicate that ZnS: Ga nanowalls are promising candidate materials for photocatalysts and applicable as photodetectors, optical switches, and sensors in the visible light region. ©2009 American Chemical Society.