Abstract
The interdiffusion between layers in multilayer thin films, including (Pb <sub>0.97</sub> La <sub>0.03</sub> )(Zr <sub>0.66</sub> Ti <sub>0.34</sub> ) <sub>0.9875</sub> O <sub>3</sub> (PLZT), SrRuO <sub>3</sub> , Ru, Pt and Si, was examined using secondary ions mass spectroscopy (SIMS). The PLZT thin films deposited on Pt-coated Si-substrate using SrRuO <sub>3</sub> as buffer layer possessed ferroelectric properties substantially superior to those grown on Si (or Si <sub>3</sub> N <sub>4</sub> ) surface. Procoating Ru-layer prior to the deposition of SrRuO <sub>3</sub> layer further improved the electrical response of PLZT thin films, that was ascribed to the efficient suppression of Sr- and Ru-outward diffusion into PLZT materials. The optimum properties attained are remanent polarization P <sub>r</sub> = 25.6 μC/cm <sup>2</sup> , coercive force E <sub>c</sub> = 47.1 kV/cm, relative dielectric constant K = 1, 200 and leakage current < 10 <sup>-5</sup> A/cm <sub>2</sub> (under 50kV/cm).