Abstract
In the early stage of the Sn/Ni-7 wt.%V reaction at 200 °C, solid state amorphization reaction occurs and an amorphous T phase layer is formed. After 48 h of reaction, a Ni 3 Sn 4 phase layer is formed between Sn and the T phase, and the reaction path is Ni-V/T/Ni 3 Sn 4 /Sn. Periodic layers, Ni-V/T/Ni 3 Sn 4 /T/Ni 3 Sn 4 /Sn, are found in the couples after 72 h of reaction. The reliability assessment of the flip chip product using Ni-V barrier needs to be evaluated based on the results in the Sn/Ni-7 wt.%V couples. © 2006 Acta Materialia Inc.