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Interfacial reactions of ultrahigh-vacuum-deposited Cu thin films on atomically cleaned (111)Si. II. Oxidation of silicon catalyzed by η'-Cu 3Si at room temperature
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Interfacial reactions of ultrahigh-vacuum-deposited Cu thin films on atomically cleaned (111)Si. II. Oxidation of silicon catalyzed by η'-Cu 3Si at room temperature

C.S. Liu and L.J. Chen
Journal of Applied Physics, Vol.74(9), pp.5507-5509
1993

Abstract

Room-temperature oxidation of (111)Si catalyzed by η'-Cu 3 Si has been studied by transmission electron microscopy, x-ray diffractometry (XRD), and Auger electron spectroscopy. XRD analysis showed that volume fractions of η'-Cu 3 Si and Cu decrease and increase with exposure time in air ambient, respectively. From TEM diffraction analysis, Cu precipitates were found to be epitaxially related to Si. After prolonged exposure in air, the Cu precipitates were found to form an irregular network structure in the SiO 2 layer. Examination of the same area of annealed samples with intermittent exposure in air indicated that the oxidation was mainly initiated at the grain boundaries. Significant differences in room-temperature oxidation behavior between (111) and (001) samples were found.

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