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Intracavity PPLN crystals for ultra-low-voltage laser Q-switching and high-efficiency wavelength conversion
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Intracavity PPLN crystals for ultra-low-voltage laser Q-switching and high-efficiency wavelength conversion

Y.H. Chen, Y.C. Huang, Y.Y. LinY.F. Chen
Applied Physics B: Lasers and Optics, 卷.80(7), 頁碼.889-896
06/2005

摘要

Physics and Astronomy (all) Physics and Astronomy (miscellaneous)
We report to the best of our knowledge the lowest switching voltage in an electro-optically Q-switched Nd:YVO 4 laser by using a 13-mm long, 14-μm-period PPLN crystal as a Pockels cell. A switching voltage as low as̃ 50V in the PPLN crystal was sufficient to hold off the lasing of the Q-switched laser at a pump power more than two times above its continuous-wave threshold. When the PPLN Q-switch was driven by a 100-V voltage at 6.5 kHz, we obtained 0.9-kW laser peak power from this 1-Wdiode-pumped Nd:YVO 4 laser system with 13% output coupling. When the PPLN Pockels cellwas cascaded with a 5-cm long, 30-μm-period PPLN crystal, we produced ̃ μJ/pulse energy at 1.59 μm from optical parametric generation inside the actively Q-switched laser. © Springer-Verlag 2005.

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