摘要
In this study, ferroelectric Fin field effect transistors (Fe-FinFET) with 5-nm-thick Hf0.5Zr0.5O2 (HZO) layers on silicon-on-insulator substrates were experimentally demonstrated. These devices had completed dimensions of single channel widths (WCh) from 20 nm to 1000 nm and gate lengths (LG) from 100 nm to 2000 nm. In experimental results, when WCh is smaller than 30 nm, and/or when LG > WCh, this proposed 5-nm-HZO Si Fe-FinFET guarantees SS <; 60 mV/decade. In addition, grazing incidence X-ray diffraction (GIXRD) through synchrotron radiation and nanobeam diffraction (NBD) were utilized to identify the crystallinity of the HZO. These Fe-FinFETs are highly favorable for ultra-low power and high-performance integrated-circuit applications.