摘要
A contact resistive random access memory (RRAM) cell consisting of a W/TiON/SiO 2 /N + silicon film stack realized using a new contact backfilled process is investigated. To precisely control RRAM film thicknesses on contact RRAM devices, in this paper, a new backfilling process of SiO 2 deposition after contact etching via plasma-enhanced chemical vapor deposition is proposed and successfully demonstrated. In addition, set/reset optimization through the incremental step pulse programming scheme is applied, enabling the new contact backfilled RRAM devices to endure 1 M P/E cycles, while maintaining a stable read window.