- Title
- Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂
- Creators - without role
- 永俊 吳
- Publication Details
- IEEE Journal of the Electron Devices Society
- Identifiers
- 9957767983006774
- Academic Unit
- Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
- Language
- English
- Resource Type
- Journal article
Journal article
Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂
IEEE Journal of the Electron Devices Society
2022
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