摘要
We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric Hf germanate. The proposed ferroelectric IT-GAAFET with short-channel (gate length = 60 nm) exhibited a steep average subthreshold slope of 53 mV/dec, a drain-induced barrier lowering of only 1.7 mV/V, and a high on-off current ratio of 1.7 x 10(7). The proposed ferroelectric IT-GAA field-effect transistor can be a candidate for the sub-N3 technology node and ultralow-power, high-performance applications.