Investigation of annealing temperature dependent sub-cycling behavior for HfZrOx-based ferroelectric capacitor

期刊文章

開放取用(OA)

Yu-Cheng Kao, Hao-Kai Peng, Sheng-Wei Hsiao, Kuo-An Wu, Chia-Ming Liu, Sheng-Yen Zheng, Yung-Hsien Wu 和 Pin-Jiun Wu

APL Materials, 卷.12(5), 頁.051118

17/05/2024

摘要

Ferroelectric thin films

url

https://doi.org/10.1063/5.0208118檢視

已出版(紀錄版本) 開放

1 檢視次數

題名: Investigation of annealing temperature dependent sub-cycling behavior for HfZrOx-based ferroelectric capacitor
創作者：: Yu-Cheng Kao (作者) - Physics Department, National Tsing Hua Univ.
Hao-Kai Peng (作者) - Department of Engineering and System Science, National Tsing Hua University
Sheng-Wei Hsiao (作者) - National Synchrotron Radiation Research Center
Kuo-An Wu (作者) - National Tsing Hua University
Chia-Ming Liu (作者) - National Tsing Hua University
Sheng-Yen Zheng (作者) - Department of Engineering and System Science, National Tsing Hua University
Yung-Hsien Wu (作者) - Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Pin-Jiun Wu (作者) - National Synchrotron Radiation Research Center
學術資源類型: 期刊文章
出版日期: 17/05/2024
出版資訊: APL Materials, 卷.12(5), 頁.051118
語言: 英語