摘要
The paper reports on the investigation of honey as the electrolyte gate dielectrics of graphene field effect transistors. Transfer and output characteristics of graphene transistors were collected at room temperature and 40 °C under open air. Typical behaviors such as Dirac neutrality point and linear relation of drain current with drain-source voltage at low field and various gate bias voltages were achieved. In addition, cleaning and reapplication of honey on transistors only show slight changes in those characteristics.