Abstract
Transparent, conductive, multicomponent oxide films composed of undoped Zn <sub>2</sub> In <sub>2</sub> O <sub>5-x</sub> were deposited on n-type GaN layer using rf sputtering. We investigated the dependence of the surface, electrical, optical properties on the sputtering parameters, including rf power, total pressure, the post-deposition annealing process. We obtained high transparency (>80% in the visible and near-infrared ranges) and low electrical resistivity (2.58×10 <sup>-4</sup> cm). Atomic force microscopy and optical transmittance measurements of Zn <sub>2</sub> In <sub>2</sub> O <sub>5-x</sub> films were used to investigate the mechanisms of resistivity variation in the films. The ohmic performances of Zn <sub>2</sub> In <sub>2</sub> O <sub>5-x</sub> contacts to the n-type GaN layer are also demonstrated. © 2002 American Institute of Physics.