Ion beam induced formation of metastable fcc-Ti phase in the epitaxial Ti/Cu/(111)Si structures

J.B. Lai; L.J. Chen; C.S. Liu

doi:10.1016/S0968-4328(99)00006-2

期刊文章

Ion beam induced formation of metastable fcc-Ti phase in the epitaxial Ti/Cu/(111)Si structures

J.B. Lai, L.J. Chen 和 C.S. Liu

Micron, 卷.30(3), 頁碼.205-211

06/1999

DOI: https://doi.org/10.1016/S0968-4328(99)00006-2

摘要

Ion beam

Metastable phase

Structural Biology

Materials Science (all)

Physics and Astronomy (all)

Cell Biology

Epitaxial Ti/Cu/(111)Si structures have been grown in ultrahigh vacuum. Mutual epitaxial growths of Ti on Cu on Ti were found even though the mismatch is as large as 15.3%. Ar ⁺ bombardment was found to induce the transformation of epitaxial hcp-Ti into epitaxial metastable fcc-Ti as well as the formation of rod-like TiO. Mechanisms for the ion beam induced phase transition are discussed.

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題名: Ion beam induced formation of metastable fcc-Ti phase in the epitaxial Ti/Cu/(111)Si structures
翻譯題名: Ion beam induced formation of metastable fcc-Ti phase in the epitaxial Ti/Cu/(111)Si structures
創作者：: J.B. Lai (作者) - National Tsing Hua University
L.J. Chen (作者) - National Tsing Hua University
C.S. Liu (作者) - Taiwan Semiconductor Manufacturing Company (China)
學術資源類型: 期刊文章
出版日期: 06/1999
出版資訊: Micron, 卷.30(3), 頁碼.205-211
語言: 英語

Ion beam induced formation of metastable fcc-Ti phase in the epitaxial Ti/Cu/(111)Si structures

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